http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200428540-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_81bbed339049c84138a09736b647d40e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-11 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate | 2003-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_799b028ecb775d17a3f0992244c076d7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62ab429b14d8d513fbd57c7e75bac121 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f92e9b95397add5ee274227dbbf5b2d0 |
| publicationDate | 2004-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200428540-A |
| titleOfInvention | Method for forming redistribution layer on semiconductor device |
| abstract | A method for forming a redistribution layer on a semiconductor device is disclosed. First, a titanium layer is formed on a surface provided with a plurality of contact pads of the semiconductor device, an aluminum layer is formed on the titanium layer and a copper layer is formed on the aluminum layer. Then, the copper layer, the aluminum layer and titanium layer are patterned to form a patterned copper layer, a patterned aluminum layer and a patterned titanium layer. Then, the patterned copper layer is removed but the patterned aluminum layer and the patterned titanium layer are left intact to form a plurality of conductive traces, wherein each conductive trace has one end connecting with one contact pad of the semiconductor device. A dielectric layer is formed on the semiconductor device and conductive traces. A plurality of blind vias are formed on the dielectric layer and correspond to the other end of the conductive traces. A plurality of bumps are formed on the conductive traces through the blind vias and electrically connected with the conductive traces. |
| priorityDate | 2003-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.