http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200426481-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a5acc73c34cf2b348b8bce69d72b9c37
filingDate 2004-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c946faa07a6a14f0912a7f8e84f8cc98
publicationDate 2004-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200426481-A
titleOfInvention Hollow lead structure and manufacturing method thereof
abstract The present invention relates to a hollow lead structure and manufacturing method thereof for improving the lead characteristics of LCD. By the special structure of the hollow lead in the present invention, the line width can be reduced while increasing the cross section, so as to reduce the resistance of the lead. Also, in order to reduce the parasitic capacitance, an insulation layer with low dielectric constant is filled into the middle and the sides of the hollow portion in the lead, so that the operating speed can be maintained. Or, an insulation layer with low dielectric constant is filled into the vertical cross section area of the gate array and the data lines for ensuring the normal operation to solve the problem of increasing parasitic capacitance and decreasing operation speed.
priorityDate 2004-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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