Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76889 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-65 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7687 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B44C1-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8239 |
filingDate |
2003-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa7cf5c2dc2db509c02e8ad77de13912 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8033648ebda2918fdfb39a5647692176 |
publicationDate |
2004-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-200426045-A |
titleOfInvention |
Method for fabricating ferroelectric random access memory device |
abstract |
The present invention relates to a method for fabricating a ferroelectric random access memory device. The method includes the steps of: (a) forming a first inter-layer insulation layer on a substrate providing a transistor; (b) etching the first inter-layer insulation layer to form a storage node contact hole exposing a partial portion of the substrate; (c) burying a storage node contact including a plug and a barrier metal layer into the storage node contact hole; (d) forming an adhesion layer on the storage node contact and the first inter-layer insulation layer; (e) inducing a predetermined portion of the adhesion layer to be cracked, the predetermined portion disposed above an upper part of the plug; (f) selectively removing the cracked predetermined portion to expose a surface of the barrier metal layer formed on the plug; and (g) forming a ferroelectric capacitor connected to the plug through the exposed surface of the barrier metal layer. |
priorityDate |
2002-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |