http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200425263-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
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filingDate 2003-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f531c54194e57119e178edbaa5c04c27
publicationDate 2004-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200425263-A
titleOfInvention Phase shift mask and production method thereof and production method for semiconductor device
abstract This invention discloses a phase shift mask for ultra-short ultraviolet ray capable of being actually constituted by properly combining the refractive index and absorption coefficient even if an ultra-short ultraviolet ray is reflected. A phase shift mask (10) comprising a reflection multi-layer film substrate (11), and a first region (12a) and a second region (12b) formed on the substrate (11) is formed by specifying the phase and reflectance of a reflection light of a ultra-short ultraviolet ray obtained from an arbitrary complex refractive index for a ultra-short ultraviolet ray and an arbitrary film thickness. Respective film thicknesses and complex refractive indexes of a formed film in the first region (12a) and a formed film in the second region (12b) are set based on the specified results, so as to produce a specified phase difference between the reflection light of a ultra-short ultraviolet ray in the first region (12a) and the reflection light of a ultra-short ultraviolet ray in the second region (12b).
priorityDate 2002-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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