| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d231147f38595bbe3114b758cba4a298 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-785 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C17-18 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C17-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C17-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-04 |
| filingDate |
2004-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84359c5dae34dae63592044d22812c1a |
| publicationDate |
2004-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200425155-A |
| titleOfInvention |
Redundancy control circuit which surely programs program elements and semiconductor memory using the same |
| abstract |
A redundancy control circuit includes a plurality of program elements and a voltage control section. In the plurality of program elements, a defect address indicating a position of a defect is programmed by a dielectric breakdown due to applying of a voltage. The voltage control section applies the voltage to a part of a plurality of targeted program elements simultaneously. The plurality of targeted program elements is a part of the plurality of program element to be dielectrically broken down correspondingly to the defect address. |
| priorityDate |
2003-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |