http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200424120-A

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filingDate 2003-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c323c6863ceff29a77a63a06ad4cb61e
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publicationDate 2004-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200424120-A
titleOfInvention Method for the manufacture of a metal oxide powder or a semiconductor oxide powder, an oxide powder, a solid and its application
abstract The invention relates to a method for the manufacture of a mixed oxide in a nano-structure with a high electric conductivity, for example indium-tin-oxide, as well as an oxide powder, a solid and its application as sputter target. The oxide is manufactured by a synthesis reaction while the liquid alloy is sputtered in a very hot plasma. The synthesis reaction is initiated at a very high temperature and is followed by a thermal state that is controlled such that it yields a crystalline structure that is free from any defects and permits a high mobility of electric charges.
priorityDate 2002-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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