http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200423792-A

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D165-00
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D165-00
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filingDate 2004-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9a895c5fb8d75c29bbb82eec462f91b
publicationDate 2004-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200423792-A
titleOfInvention High resistance poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) for use in high efficiency pixellated polymer electroluminescent devices
abstract High resistance PEDT/PSS buffer layers are provided for use in electroluminescent devices such as, e.g., OLEDs. In accordance with another embodiment, there are provided OLEDs comprising high resistance PEDT/PSS buffer layers. In accordance with a further embodiment, methods have been developed for decreasing the conductivity of a PEDT/PSS layer cast from aqueous solution onto a substrate, by adding a cyclic ether co-solvent to the aqueous solution of PEDT/PSS prior to casting. In one embodiment, there are provided methods for decreasing the inherent conductivity of a PEDT/PSS layer cast onto a substrate so that this material can be used as an intermediate buffer layer in red, green, blue organic light emitting diodes (RGB OLEDs).
priorityDate 2003-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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