http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200421593-A

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filingDate 2003-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2004-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200421593-A
titleOfInvention Method for production of an integrated circuit arrangement, in particular with a capacitor arrangement, as well as an integrated circuit arrangement
abstract A method is explained for production of an integrated circuit arrangement (100) which contains a capacitor (112). A dielectric layer (160) is structured with the aid of a two-stage etching process, and with the aid of a hard mask. In the case of an electrically insulating hard mask, the hard mask is removed again. In the case of an electrically conductive hard mask, parts of the hard mask may remain in the circuit arrangement (100). The integrated circuit arrangement can thus be produced without any complicated cleaning steps. The quality of the dielectric in the capacitor is, furthermore, very high.
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