| abstract |
The present invention provides a semiconductor device and the manufacturing method thereof, which includes the following steps: forming low-k film 11 on the pad A and the whole surface of the substrate 1 of the circuit portion B; forming the photoresist pattern 13 on the low-k film 11; forming the opening 14 inside the low-k film 11 of the pad A using the photoresist pattern 13 as the mask; forming the silicon oxide film 15 with higher strength than that of the low-k film 11 using liquid forming method in the opening 14; forming the pad via 17 in the silicon oxide film 15 using damascene process, and forming the Cu damascene wiring 16 in the low-k film 11 of the circuit portion B. |