| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0203 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-65
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0733 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2003-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff80b2045f860779ef6fd7b959bd07b6 |
| publicationDate |
2004-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200414284-A |
| titleOfInvention |
Semiconductor device and the manufacturing method thereof |
| abstract |
The present invention is applied in high frequency MIM (metal-insulator-metal) capacitor, which uses different capacitor insulative film structure between the same upper and lower electrodes to satisfy both the requests of reducing current leakage and shrinking the area for forming the capacitor. For the capacitor requiring low current leakage, it can insert the capacitor insulative film for eliminating current leakage to realize the MIM capacitor with low current leakage. For the capacitor requiring reduced capacitor area, it can apply the high-k film in the capacitor insulative film to realize the MIM capacitor with small capacitor area. The present invention uses the same upper and lower electrodes 13, 17 to simultaneously form the capacitors with these two characteristics to reduce the processing cost. |
| priorityDate |
2002-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |