| abstract |
This invention is to provide a composition for forming an anti-reflective film, which exhibits good absorptivity for a light having a wavelength suitable for use in the production of a semiconductor device, has high antireflection effect, and exhibits a dry etching rate greater than that of a photoresist layer. The composition, which can provide an anti-reflective film, is characterized in that it comprises a compound, an oligomer or a polymer comprising a triazine-trione moiety having a hydroxyalkyl structure as a substituent on a nitrogen atom. |