| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4414d40ccb24e90d601a1253cc7b700c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23H5-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25F3-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23H5-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25F3-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 |
| filingDate |
2003-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ffe63aeb4e83191d08a64aef9c737628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42195aadcd10e155aef5835923274191
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3e5c54367e643c324cb52d9fe3a101d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a8368452039f870764edcea3ffe5079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2ad6878633aeb70caf79d496d155ac0 |
| publicationDate |
2004-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200409223-A |
| titleOfInvention |
Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers |
| abstract |
A metal layer formed on a semiconductor wafer is adaptively electropolished. A portion of the metal layer is electropolished, where portions of the metal layer are electropolished separately. Before electropolishing the portion, a thickness measurement of the portion of the metal layer to be electropolished is determined. The amount that the portion is to be electropolished is adjusted based on the thickness measurement. A metal layer formed on a semiconductor wafer is polished, where the metal layer is formed on a barrier layer, which is formed on a dielectric layer having a recessed area and a non-recessed area, and where the metal layer covers the recessed area and the non-recessed areas of the dielectric layer. The metal layer is polished to remove the metal layer covering the non-recessed area. The metal layer in the recessed area is polished to a height below the non-recessed area, where the height is equal to or greater than a thickness of the barrier layer. |
| priorityDate |
2002-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |