| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-05 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14689
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82385
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14609 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate |
2003-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbab6e33de425350a809c8b88b3abb5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73b3fff5a07032df914e123d735d4d56 |
| publicationDate |
2004-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200408111-A |
| titleOfInvention |
Semiconductor device and its manufacturing method, and electronic apparatus |
| abstract |
The present invention provides a semiconductor device and its manufacturing method, and electronic apparatus carrying the semiconductor device. The semiconductor chip can have: an imaging region on which a CMOS solid-state imaging element or a DRAM hybrid logic LSI is formed; an imaging region in which a MOS transistor of an LDD structure without metal silicide layer is formed; a region such as a DRAM cell is formed; and a region of a logic circuit in which a MOS transistor of an LDD structure with a metal silicide layer is formed. By using several layers of insulating films in the present invention, the side wall of a gate electrode is formed by etching back the insulting films or a single-layer film in the region where the metal silicide layer is formed, and the side wall of an upper insulating film is formed on a lower insulating film covering the surface in the region without metal silicide, or the insulating films are left as there are, thereby fabricating the semiconductor device. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I420658-B |
| priorityDate |
2002-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |