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filingDate 2003-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f224098f496920da207c4cf5cff0084
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f81b1ca0ef3ac9e70d5fc87adf9b428a
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publicationDate 2004-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200408068-A
titleOfInvention Control of memory arrays utilizing zener diode-like devices
abstract The present invention facilitates semiconductor devices by aiding the efficiency in the way individual devices change states in a semiconductor array (100, 200, 212, 300, 400). State change voltages can be applied to a single device in the array (100, 200, 212, 300, 400) of semiconductor devices without the need for transistor-type voltage controls. The diodic effect (114, 508, 510, 900, 1014, 1114, 1214, 1502, 1702, 1812) of the present invention facilitates this activity by allowing specific voltage levels necessary for state changes to only occur at the desired device. In this manner, an array of devices can be programmed with varying data or states without utilizing transistor technology. The present invention also allows for an extremely efficient method of producing these types of devices, eliminating the need to manufacture costly external voltage controlling semiconductor devices.
priorityDate 2002-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 44.