http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200408056-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd83260a96356882b5f50dd097411a72 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 2003-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1671be7699f35c14383db5e407341829 |
| publicationDate | 2004-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200408056-A |
| titleOfInvention | Semiconductor device with thick interconnections free of dishing and erosion, and method of manufacturing such semiconductor device |
| abstract | A semiconductor device has an insulating film, a group of narrow grooves defined in the insulating film, the narrow grooves having a first interconnection width, and a group of wide grooves defined in the insulating film and having a second interconnection width. A plated film is formed in the narrow grooves and the wide grooves and on the insulating film. The second interconnection width is greater than the first interconnection width and limited to a range of widths subject to a bottom-up effect. Because the width of the second interconnection width is limited to the range of widths subject to the bottom-up effect, when the plated film is formed in the narrow grooves and the wide grooves, the plated film has a relatively large thickness over the wide grooves. Therefore, when the plated film is subsequently removed by CMP (Chemical Mechanical Plating), the plated film in the wide grooves is free of dishing and erosion. |
| priorityDate | 2002-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID418354341 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978 |
Total number of triples: 20.