http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200407972-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31b1220216408a6076f55e0ba4ec1003 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-967 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-185 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7605 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2003-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0c5c34ab867c8372e6b69f248b82614 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17428940a88ca97fc2ed5dc921e6c3cc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa0d64d25aae3b980f37bfa0d778ce6d |
| publicationDate | 2004-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200407972-A |
| titleOfInvention | A method of fabricating a substrate comprising a useful layer of a monocrystalline semiconductor material with improved properties |
| abstract | A method for manufacturing a substrate comprising a useful layer(30) of at least one monocrystalline semiconductor material on a support(40) involves an epitaxial growing of the monocrystalline semiconductor material on a nucleation layer(12). The nucleation layer is provided on an intermediate support(20) in the form of a thin layer of nucleation material taken from a source substrate(10). The following steps are performed: selecting the material of intermediate support so that it can be chemically etched by a given etching medium, it is liable to thermal dissociation when exposed to the temperature of epitaxial growing, and it is less expensive than materials which are less liable to thermal dissociation at said temperature of epitaxial growing; selecting the material of the nucleation layer so that it forms a barrier against the diffusion of elements deriving from the thermal dissociation of the material of the intermediate support; applying the nucleation layer(12) to the intermediate support(20); growing the or each monocrystalline semiconductor material of the useful layer(30) on said nucleation layer(12); bonding the useful layer(30) to a final support(40) at the face of said useful layer opposite to the intermediate support; and exposing said intermediate support(20) to said etching medium to remove it by chemical etching substantially without affecting the useful layer. Application to producing optoelectronic components such as LEDs based on thin layer metallic nitrides. |
| priorityDate | 2002-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.