http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200407963-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-36
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-00
filingDate 2003-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa575b1ee54f60a9bcb0d7baae2b6483
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0db1fd78bb6ab896e5c3e27b5d3c05dd
publicationDate 2004-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200407963-A
titleOfInvention Method for determining the construction of a mask for the micropatterning of semiconductor substrates by means of photolithography
abstract In the method, which is to be carried out on a computer system, firstly design data of a semiconductor substrate are read in and, on the basis thereof, a mask image is generated in the form of a data structure with contact holes and with auxiliary structures on the computer system. Afterwards, contact hole biases are determined by means of an optical proximity correction method and the relevant contact holes are corrected on the basis of these contact hole biases. By means of subsequent imaging simulation of the mask image on the semiconductor substrate, undesired imaging auxiliary structures and contact holes deviating from specified tolerances on the semiconductor substrate are detected and corrected. During the imaging simulation of the mask image, a mask bias is employed in order to compensate for three-dimensional mask effects. A real mask can be produced on the basis of the mask image thus determined.
priorityDate 2002-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6338112
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426099809
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23940
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419577462

Total number of triples: 17.