http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200405453-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47cc435e1d443f13180f7766df104d9d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-04 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-04 |
| filingDate | 2003-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff37d7ae5f5a9b8fb3f1085678217500 |
| publicationDate | 2004-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200405453-A |
| titleOfInvention | Slurry and polishing method |
| abstract | Slurry contains an oxidizer, water, pH modifier, and cyclic organic compound for enhancing the chemical polishing of polished surface. Wherein the pH value of the slurry is 5-10, and the cyclic organic compound contains an imidazole structure. Using the slurry to perform an interconnect process of a semiconductor device can keep low etching rate, and increase polishing rate. Also, using the slurry can avoid the erosion and dishing phenomenon of the metal surface. Therefore, the reliability of pattern of buried metal layer can be improved. |
| priorityDate | 2002-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 174.