| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1010e3862914acdd087e73d76911ec6d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31662 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate |
2003-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41b512537ef30e0cbd703f79e769cd43 |
| publicationDate |
2004-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200402797-A |
| titleOfInvention |
Method of forming silicon dioxide film on surface of silicon substrate, method of forming oxide film on surface of semiconductor substrate, and method of manufacturing semiconductor device |
| abstract |
This invention is to immerse a silicon substrate (1) in a 0.5 vol.% HF aqueous solution for 5 minutes, after wash cleaning, to remove impurities and native oxide. After washing with ultra-pure water, the silicon substrate (1). A metal film (6) (aluminum-silicon alloy film) is deposited on the chemical oxide film (5). The substrate is heated in a gas containing hydrogen at 200 DEG C for 20 minutes. By thus heating the substrate in a gas containing hydrogen, the hydrogen reacts with the interface states and defect states in the chemical oxide film (5), and the states disappear. Consequently, the quality of film can be improved. Thus, a very thin silicon dioxide film having a low leak current density and a high quality can be formed on a silicon substrate at low temperatures with a good film thickness controllability. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102005500-A |
| priorityDate |
2002-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |