| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_32c33838d97bf8457fe975eae0f7f2e4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28525 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02 |
| filingDate |
2003-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff5345616f3ab9b269ef13b79841ba5e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdb6b4be8ae94153449e8c57b94cb94f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91e7093c80b491156a4204b457f9213a |
| publicationDate |
2004-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200402772-A |
| titleOfInvention |
Method of depositing an oxide film by chemical vapor deposition |
| abstract |
A method of depositing a silicon dioxide film on the surface of a semiconductor substrate or wafer is particularly useful for improved film integrity on difficult topologies such as sub-0.1 micron topologies, high aspect ratio trenches in sub-micron topologies, sidewalls having slight overhangs at layer interfaces, and sidewalls having slightly reentrant areas. In one embodiment, the method involves the deposition of successive thin layers with a silicon-containing source and an oxygen-containing source, each layer deposition being preceded by a pre-treatment of the prior layer involving exposure of the surface to an oxygen-containing source without a silicon-containing source. The deposition of multiple thin silicon dioxide layers continues until a film of desired thickness is formed. For structures containing trenches to be filled, each thin layer is less than half the width of the smallest trench so that preferably multiple layers are used to fill the trenches. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I682050-B |
| priorityDate |
2002-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |