| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate |
2003-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14ef61e20f384f2875854352275c15fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5bd339876eb2f0ca4ce6e22c7878143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a21d062ba83a98b449ffcecd1b9ea0c7 |
| publicationDate |
2004-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200401402-A |
| titleOfInvention |
Structure of metal-metal capacitor |
| abstract |
A structure of metal-metal capacitor and the method for fabricating the metal-metal capacitor (MMC) is presented. Wherein the lower electrode of the metal-metal capacitor is located in the uppermost layer of said semiconductor structure. A bonding pad employed as the connection of the semiconductor structure and the outside can be fabricated with the upper electrode of said metal-metal capacitor. The above-mentioned process can fabricate a metal-metal capacitor over the uppermost layer of a semiconductor structure efficiently. Moreover, in said method, this invention can not only save a mask in the manufacture, but also raise the capacitance of the metal-metal capacitor by extending the electrode of the metal-metal capacitor. |
| priorityDate |
2002-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |