| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c44bdb51c600e2f2969432866f52bd37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S156-914
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D1-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-473 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C4-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-473
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-2441
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-509 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D7-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J19-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C4-18 |
| filingDate |
2003-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_406c877f7dce7bee21cbb813436d5481 |
| publicationDate |
2004-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200401043-A |
| titleOfInvention |
Dielectric-coated electrode, plasma discharge treatment and method for forming thin film |
| abstract |
A dielectric-coated electrode having a conductive base material coated with a dielectric on a surface thereof, the dielectric including a first metal atom and a second metal atom. As for an ionic strength of the first metal atom and an ionic strength of the second metal atom according to a dynamic SIMS measurement, the ionic strength of the second metal atom is larger than the ionic strength of the first metal atom from the most surface of the dielectric toward a predetermined depth of the dielectric, and the ionic strength of the first metal atom is larger than the ionic strength of the second metal atom from the predetermined depth toward the surface of the conductive base material. |
| priorityDate |
2002-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |