| abstract |
This invention discloses a polishing composition having good polishing capability for a semiconductor device and a method for forming a wiring structure. According to the invention, a first polishing composition which comprises at least one selected from among silicon dioxide and periodic acid and salts thereof, at least one selected from tetraalkylammonium hydroxides and tetraalkylammonium chlorides, hydrochloric acid, and water, and is substantially free of iron; and a second polishing composition which comprises a predetermined amount of fumed silica, at least one selected from a predetermined amount of periodic acid and salts thereof, a tetraalkylammonium salts represented by the following general formula (1): (1), at least one selected from ethylene glycol and propylene glycol, and water, and has a pH of 1.8 or higher and less than 4.0. The above polishing compositions can be used for polishing a semiconductor device advantageously. |