Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67092 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-681 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-44 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-784 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01B11-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06K9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F9-00 |
filingDate |
2002-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_281d6f01d118047b40118a0de3703d6a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3679d3fe9f40fb1230e9bf833e468e40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3dd2c7a5bf071bc899bb2a985fe567c |
publicationDate |
2003-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-200307333-A |
titleOfInvention |
Recognition method of a mark provided on a semiconductor device |
abstract |
A high-contrast image recognition can be performed by recognizing an image of a recognition mark from a back surface of a wafer by a visible-light camera by irradiating a visible light from a circuit pattern surface of a silicon substrate. A thickness of the silicon substrate is set to 5 μ m to 50 μ m. A white or visible light having a wavelength equal to or less than 800 nm is irradiated onto the circuit-pattern forming surface of the substrate. A visible light that has transmitted through the silicon substrate is received by a visible-light camera on a side of a back surface of the silicon substrate. An image of a recognition mark formed on the circuit-pattern forming surface of the silicon substrate is recognized by the visible-light camera. |
priorityDate |
2002-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |