| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0755
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0048
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate |
2002-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f725de632c885a7aa9822ba15f83dd3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23cfb055bf88286becaa503a8173bab7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98a745a3f686982539a6b80951852617
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_603bee38b614f63a508dca335e885792 |
| publicationDate |
2003-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200303454-A |
| titleOfInvention |
Photoresist composition and patterning process |
| abstract |
The object of the present invention is to provide a photoresist composition characterized in comprising (A) a substantially alkali-insoluble polymer having acidic functional groups protected with acid labile groups, which becomes alkali soluble upon elimination of the acid labile groups, (B) a photoacid generator, and (C) a nonionic fluorinated organosiloxane compound consisting of perfluoroalkyl-containing siloxane bonds and polyoxyethylene type polyether bonds which is exposed to exposure source of UV having a wavelength of at least 150 nm. The photoresist composition can be exposed to UV having a wavelength of at least 150 nm to form a pattern without leaving scum. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8697329-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I512398-B |
| priorityDate |
2001-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |