| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 |
| filingDate |
2003-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_887dd85fd9867901bad2b7d8dd68a381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_edbf5c22075915ebe86d22ec326bd5d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_daa55c2c63fc7013680ab8d4ce4600c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3f64c642efbc34c1ba9b408ad223dcb |
| publicationDate |
2003-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200303453-A |
| titleOfInvention |
Compositions for anti-reflective light absorbing layer and method for forming patterns in semiconductor device using the same |
| abstract |
A composition for an anti-reflective layer capable of simultaneously being developed together with a photoresist layer after exposure of the photoresist layer in a photolithography process and a method for forming patterns in a semiconductor device using the composition, wherein the anti-reflective light absorbing layer composition includes a polymer having a (meth)acrylate repeating unit, a light-absorbing group of diazoquinones chemically bound to the (meth)acrylate repeating unit, a photoacid generator, a cross-linker which thermally cross-links the polymer and is decomposed from the polymer by an acid, and a catalyst for the cross-linking reaction of the polymer. The method for forming patterns in a semiconductor device involves forming an anti-reflective layer on a semiconductor substrate using the composition and simultaneously exposing the anti-reflective layer and a photoresist layer, thereby chemically transforming the anti-reflective layer so it is able to be developed. The anti-reflective layer and the photoresist layer are simultaneously developed. |
| priorityDate |
2002-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |