Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-0769 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2203-0723 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49155 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-388 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49144 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76867 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76886 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-38 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
filingDate |
2002-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f03eef3340c5a1501a97a5788d158bf2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2004bae0783ebf5555db0e639843694 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f16277c95e27c42d7c4642bcd887dab7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63eaab1acff6cebfc49c480056dbbcaf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19f00e8c4eedd6f1ffe8af466ce50d79 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e381ad63fcc23ae2c01537e9762990c |
publicationDate |
2003-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-200301524-A |
titleOfInvention |
Method for improving electromigration performance of metallization features through multiple depositions of binary alloys |
abstract |
The reliability and electromigration performance of planarized metallization patterns in an electrical device, for example copper, inlaid in the surface of a layer of dielectric material overlying a semiconductor substrate (1), are enhanced by a method for more reliably and uniformly diffusing into a metallization feature (9') alloying elements which reduce or substantially prevent electromigration. The method emprises depositing around a metallization feature (9') metal alloy films (8) and alloying layers (11) comprising one or more alloying elements having physical and/or chemical attributes which are effective for minimizing or substantially preventing electromigration along grain boundaries and/or along the interface between the surfaces of the metallization feature (9') and other surfaces. The metal alloy films (8) and alloying layers (11) are advantageously deposited where their particular physical and/or chemical attributes may be most beneficial for improving electromigration performance. The alloying elements may then be diffused into the metallization feature (9') to effect alloying therewith. |
priorityDate |
2001-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |