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filingDate 2002-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2003-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200301524-A
titleOfInvention Method for improving electromigration performance of metallization features through multiple depositions of binary alloys
abstract The reliability and electromigration performance of planarized metallization patterns in an electrical device, for example copper, inlaid in the surface of a layer of dielectric material overlying a semiconductor substrate (1), are enhanced by a method for more reliably and uniformly diffusing into a metallization feature (9') alloying elements which reduce or substantially prevent electromigration. The method emprises depositing around a metallization feature (9') metal alloy films (8) and alloying layers (11) comprising one or more alloying elements having physical and/or chemical attributes which are effective for minimizing or substantially preventing electromigration along grain boundaries and/or along the interface between the surfaces of the metallization feature (9') and other surfaces. The metal alloy films (8) and alloying layers (11) are advantageously deposited where their particular physical and/or chemical attributes may be most beneficial for improving electromigration performance. The alloying elements may then be diffused into the metallization feature (9') to effect alloying therewith.
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