| abstract |
A metal wiring substrate is disclosed, in which a metal wiring 105 buried in the surface layer of the electrically insulating substrate 104 is pasted onto the carrier sheet 101 which is for covering the metal wiring 105 and can have mechanical peeling and can prevent oxidation. The semiconductor device using the substrate has the following structure that a metal terminal electrode 105 buried in the electrically insulating substrate 104 is electrically connected to the protruded electrode 107 on the semiconductor device 106, and the front end of the protruded electrode 107 is pressed down when the semiconductor device 106 is assembled on the substrate 104 by heating and pressing. The connection portion of the substrate 104 and semiconductor device 106 is reinforced by the insulating resin 108 and is integrated. Thus, a metal wiring substrate having carrier sheet which can proceed low-resistance, high-reliability bump connection and semiconductor device using a low cost wiring pattern, and its manufacturing method can be provided. |