http://rdf.ncbi.nlm.nih.gov/pubchem/patent/SU-1389606-A1
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8b9a40e04216390759c502a5eeb38ab6 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
filingDate | 1986-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 1989-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0be30efa7ee7dd49c2a6da3a8452311b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c93231e9554f74764e2f230b856f901 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25633424ba3f1ce049ee50753d4ca98b |
publicationDate | 1989-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | SU-1389606-A1 |
titleOfInvention | Method of determining the capacitance of material with wide inhibition zone in heterojunctions and mis-structures |
abstract | The invention relates to semiconductor technology and can be used to control the parameters of semiconductor structures during their manufacture, as well as in the process of manufacturing semiconductor devices based on them. The aim of the invention is to expand the functional possibilities and improve the accuracy of capacitance measurements. According to the invention, the sample under study is illuminated with intensity modulated light absorbed only in a material with a smaller band gap. At two different values of the capacitive load, connected in series with the sample under study, the dependence of the variable component of the photoresponse on the modulation frequency is measured. The obtained dependences determine the value of photo responses at that modulation frequency, a further increase of which does not change the size of photo responses. The capacitance of a material with a larger band gap is calculated from the values of photo responses that do not depend on a further increase in the modulation frequency of the radiation and on the corresponding values of capacitive loads. 2 Il. h oh. 00 |
priorityDate | 1986-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID71586773 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID428438116 |
Total number of triples: 16.