http://rdf.ncbi.nlm.nih.gov/pubchem/patent/SU-1290110-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_28811825936fc1f01deaabf4afb5778e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01L9-04 |
| filingDate | 1984-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1987-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d89cc9f483f62dbd2247319092c614a2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c37c5d2eae9a106afeab40e4df5531c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5404acf91f74db899881a341a579f49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d44c83880d0d4dd66337873c12f59ea0 |
| publicationDate | 1987-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | SU-1290110-A1 |
| titleOfInvention | Method of manufacturing pressure strain gauge transducers |
| abstract | The invention relates to a measurement technique and makes it possible to simplify the manufacturing technology. In a semiconductor wafer oriented in the lOOl plane, the basic crystallographic direction 110 is determined. After deposition of the metal and photoresistive layers on the wafer, the longitudinal axis of the strain gauge is rotated to either side by an angle of 22.5 from the baseline. They create current and potential contacts and give the strain gauge the necessary shape and thickness, exposing the plate coated with it in a definite place with chemical etching. with (L S y with |
| priorityDate | 1984-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415791094 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID92123 |
Total number of triples: 16.