http://rdf.ncbi.nlm.nih.gov/pubchem/patent/SU-1201920-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_53b91e43f61b3aaa97abaa74f06a91be |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J49-26 |
| filingDate | 1984-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1985-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_393ac7953dabf5bde66d16bac610e1a1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3d254373193291fa35f769811a47c9f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0ea55f92f509430a39794d9bdbd4a9b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5ebf843d8f97be9054ec6760d4247d5 |
| publicationDate | 1985-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | SU-1201920-A1 |
| titleOfInvention | Method of layer-to-layer analyzing of solids |
| abstract | The invention relates to the field of mass spectrometry of secondary ions and can be used for the concentration distributions of elements in depth in massive objects and thin films, as well as for studying diffusion processes. The purpose of the invention is to improve the accuracy of layer-by-layer analysis. Samples of solid: solids, such as silicon oxide and monocrystalline silicon, are doped with a reference element, boron, successively bombarding the surface with ions of various values 20.35, 50, 75 and 10 keV (E, -EU) with doses in the particle range / cm. The energy values are chosen from the condition of resolving the depth of the solid of the maxima of the distributions of the implanted atoms of the reference element and corresponding to the first maximum depth not smaller than the depth of the surface layer, when spraying which stabilizes the parameters of the secondary ion fluxes. The reference points by which one can judge the thickness of the sprayed layer are the maxima and minima. Knowing the boron concentration and the depth of extreme values, the accuracy and layer-by-layer resolution of the analysis are determined from the time dependences of the fluxes of secondary boron ions and components contained in silicon and silicon oxide, 1 hp. f-ly, 2 ill. |
| priorityDate | 1984-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.