| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2427d3221e87279ac2fb7da56469ae88 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-151
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8613
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-823
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0097
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8413
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8822 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-00 |
| filingDate |
2014-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01d700ef70bed136a41359c3418db24b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a291305c9133a56ad87552e925da02c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_562224cdab3c836e02022ccf7e23644b |
| publicationDate |
2016-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
SI-24776-A |
| titleOfInvention |
Switching elements based on macroscopic quantum states and their methods of operation |
| abstract |
Electrical switching between macroscopic quantum states in 1T-TaS2 is presented according to the principle observed in fast laser transitions in the same material. It is based on the finding that switching between macroscopic quantum states with sufficient differences in electrical resistance is surprisingly possible with the introduction of an electric current. The switching devices based on macroscopic quantum states have the first and second electrodes and the active material, the active material has an optional and stable first and second macroscopic quantum state with the first and second values of the electrical resistance at the same temperature. Under the temperature of 180K, the active material is in the compensating (C) insulator state, from which the electric current (writing W - write) passes into the hidden quantum state (H - hidden), which leads to a change in state and electrical resistance. A conditional reading step (R - read) can determine the resistance of the active material, and the erase step (E - erase) returns the active material back to the first or second - state state with higher resistance with a longer current burst. |
| priorityDate |
2014-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |