http://rdf.ncbi.nlm.nih.gov/pubchem/patent/SG-192717-A1

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filingDate 2012-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d7a4208822824bfd4bef74e0240e986
publicationDate 2013-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber SG-192717-A1
titleOfInvention Copper or copper alloy, bonding wire, method of producing the copper, method of producing the copper alloy, and method of producing the bonding wire.
abstract 5 COPPER OR COPPER ALLOY, BONDING WIRE, METHOD OF PRODUCING THE COPPER METHOD OF PRODUCING THE COPPER ALLOY, AND METHOD OF PRODUCING THE BONDING WIRECopper or a copper alloy characterized in having an a-ray emission of 10 0.001 cph/cm2 or less. Since recent semiconductor devices are produced to have higher density and higher capacity, there is greater risk of soft errors caused by the influence of a rays emitted from materials positioned near semiconductor chips. In particular, there are strong demands for achieving higher purification of copper and copper alloys which are used near the semiconductor device, such as copper or copper alloy wiring lines, copper or copper alloy bonding wires, and soldering materials, and materials reduced in a-ray emission are also demanded. Thus, the present invention elucidates the phenomenon in which a rays are emitted from copper or copper alloys, and provides copper or copper alloy reduced in a-ray emission which is adaptable to the demanded material, and a bonding wire in 20 which such copper or copper alloy is used as its raw material.Fig. 4
priorityDate 2011-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 36.