| abstract |
Production of a III-V multilayer semiconductor comprises producing a crystal layer of a III-V nitride multilayer semiconductor of formula InxGayAlzN by hydride gas phase epitaxy. The deposition pressure during epitaxial growth is no lower than 800 Torr. An Independent claim is also included for a III-V nitride multilayer semiconductor produced by the above process. Preferably initially a nitride multilayer semiconductor layer is formed on the substrate to obtain a base layer, then the III-V nitride multilayer semiconductor is formed on the base layer. The substrate is silicon (Si), gallium arsenide (GaAs), silicon carbide (SiC), zirconium boride (ZrB2) and sapphire. |