http://rdf.ncbi.nlm.nih.gov/pubchem/patent/SG-11201908791S-A

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filingDate 2018-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a05c0451d8d15d7b4a7ee2f410630af6
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publicationDate 2019-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber SG-11201908791S-A
titleOfInvention Etchant composition for etching titanium layer or titanium-containing layer, and etching method
abstract Provided are: an etchant composition for titanium or titanium alloy, the etchant composition being used for selectively etching a titanium layer or titanium-containing layer formed on an oxide semiconductor layer; and an etching method using said etchant composition. The etchant composition according to the present invention, which is used for etching a titanium layer or titanium-containing layer on an oxide semiconductor, comprises: a compound containing ammonium ions; hydrogen peroxide; and a basic compound, wherein the etchant composition has a pH of 7-11. [No suitable figure]
priorityDate 2017-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 31.