http://rdf.ncbi.nlm.nih.gov/pubchem/patent/SG-11201810132W-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2029-5004 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2297 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2295 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-50012 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2277 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2275 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-50004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2293 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-22 |
| filingDate | 2017-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_574492efd1ff4a2c2047e87ab4289f63 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_415125ec4507090a82f705eb797f95ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6665e0353363a1c68c2b8958cdebe7ab |
| publicationDate | 2018-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | SG-11201810132W-A |
| titleOfInvention | Ferroelectric memory cell recovery |
| abstract | INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property MD HIM 01E111 11111 MEMO 01111111111111011111110111M1111 MI Organization International Bureau (10) International Publication Number (43) International Publication Date .....0\"\" WO 2017/213953 Al 14 December 2017 (14.12.2017) WIP0 I PCT (51) International Patent Classification: AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, Gl1C 11/22 (2006.01) CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, (21) International Application Number: DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, PCT/US2017/035423 HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, (22) International Filing Date: MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, 01 June 2017 (01.06.2017) PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, (25) Filing Language: English SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (26) Publication Language: English (84) Designated States (unless otherwise indicated, for every (30) Priority Data: kind of regional protection available): ARIPO (BW, GH, 15/179,695 10 June 2016 (10.06.2016) US GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, (71) Applicant: MICRON TECHNOLOGY, INC. [US/US]; TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, 8000 S. Federal Way, Boise, Idaho 83716-9632 (US). EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, (72) Inventors: MARIANI, Marcello; 8000 S. Federal Way, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, Boise, Idaho 83716-9632 (US). SERVALLI, Giorgio; TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, 8000 S. Federal Way, Boise, Idaho 83716-9632 (US). LO- KM, ML, MR, NE, SN, TD, TG). CATELLI, Andrea; 8000 S. Federal Way, Boise, Idaho 83716-9632 (US). Declarations under Rule 4.17: — as to applicant's entitlement to apply for and be granted a (74) Agent: HARRIS, Philip W.; Holland & Hart LLP, P.O. = patent (Rule 4.17(ii)) Box 11583, Salt Lake City, Utah 84147 (US). — as to the applicant's entitlement to claim the priority of the = (81) Designated States (unless otherwise indicated, for every earlier application (Rule 4.17(iii)) kind of national protection available): AE, AG, AL, AM, = — (54) Title: FERROELECTRIC MEMORY CELL RECOVERY = = (57) : Methods, systems, and devices for recovering fatigued fer- roelectric memory cells are described. Recovery voltages may be applied to = 4!0 455 415 a ferroelectric memory cell that is fatigued due to repeated access (read or =v The have a greater amplitude than = = i1 i i i i write) operations. recovery voltage may the access voltage and may include multiple voltage pulses or a constant = I I I ! y y -e voltage. The recovery operation may be performed in the background as the memory array operates, or it may be a host device is not performed when = — _ = 445-5 \----- 400. 115, actively using the memory array. The recovery operations may be performed periodically or may include discrete series of pulses distributed among sev- eral instances. = = I n I I I T' 11 \ '''---- 400-b en ir) i i i i I I I I - CT M ,-, ei IN 11 © ei ---- 400-c FIG. 4 C [Continued on next page] WO 2017/213953 Al MIDEDIMOHNIIMMEMODINIIIINIMEINHEVOIMIE Published: — with international search report (Art. 21(3)) |
| priorityDate | 2016-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID413832638 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID17318 |
Total number of triples: 26.