Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_32695c99e0bbcd5da589de56bb6215d6 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01078 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48237 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12043 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01019 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1461 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-15311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32225 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49872 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
filingDate |
2007-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ad7835fb220a2bf3a45017fa8a49229 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d08b8960f7041e2b3c1d2a273afc77f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba2f9e1646256c6a657c298586b4ae8e |
publicationDate |
2008-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
SE-0801620-L |
titleOfInvention |
Methods for manufacturing a starting substrate disk for semiconductor manufacturing, with disk-through connections |
abstract |
The invention relates to a method of making a starting substrate wafer for semiconductor engineering having electrical wafer through connections (140; 192). It comprises providing a wafer (110; 150) having a front side and a back side and having a base of low resistivity silicon and a layer of high resistivity material on the front side. On the wafer there are islands of low resistivity material in the layer of high resistivity material. The islands are in contact with the silicon base material. Trenches are etched from the back side of the wafer but not all the way through the wafer to provide insulating enclosures defining the wafer through connections (140; 192). The trenches are filled with insulating material. Then the front side of the wafer is grinded to expose the insulating material to create the wafer through connections. Also there is provided a wafer substrate for making integrated electronic circuits and/or components, comprising a low resistivity silicon base (110) having a high resistivity top layer (122) suitable for semiconductor engineering, characterized by having low resistivity wafer through connections (140). |
priorityDate |
2006-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |