http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-97215-U1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-00 |
| filingDate | 2010-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | RU-97215-U1 |
| titleOfInvention | FLASH MEMORY ELEMENT OF ELECTRICALLY REPROGRAMMABLE PERMANENT MEMORY DEVICE |
| abstract | A flash memory element of an electrically reprogrammable read-only memory device relates to computer technology and is designed to store information when the power is off. On a silicon substrate with a source and a drain between the latter are sequentially blocking, storage, tunnel layers and a conductive gate. The storage layer is made in the form of nanoclusters from a material with a value of the work function, which prevents the draining of the charge captured by the storage medium, in comparison with silicon nitride. As the indicated material, a metal with a large potential barrier for charge draining, more than 3.1 eV, was used. The result is an increase in reliability in the mode of storing information at elevated temperatures, an increase in the percentage of yield of suitable products. 4 s.p. f-ly, 1 ill. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2584728-C1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2546201-C2 |
| priorityDate | 2010-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.