http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2750295-C1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3d4319817b45fc68ceba0e42eb46170c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2036 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82B3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82B3-00 |
| filingDate | 2020-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fec327e96d54475224c8faf72c835d81 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62dd1302ea9952b08163851dd9fb2081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf8e905c7b429384c6b5f2d3cb604cb9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11f2b49a0425f20f8be4ff0077128591 |
| publicationDate | 2021-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | RU-2750295-C1 |
| titleOfInvention | Method for producing heteroepitaxial layers of iii-n compounds on monocrystalline silicon with 3c-sic layer |
| abstract | FIELD: semiconductor technology.SUBSTANCE: invention relates to semiconductor technology. The method is intended for producing heteroepitaxial layers of metal nitride compounds of group III (III-N), such as AlN, GaN, AlGaN and others, on monocrystalline silicon substrates. The III-N connections are used to create semiconductor power and microwave electronics devices. The method consists in the initial formation of a solid monocrystalline layer of silicon carbide of a cubic polytype (3C-SiC) with a thickness not exceeding the critical thickness thereof on the surface of a silicon substrate. On the surface of 3C-SiC, the first layer of aluminium nitride is grown at a temperature of not more than 1000°C and the second layer of aluminium nitride at a temperature of not more than 1250°C. The supergrille of the composition AlN/AlxGa1-xN (0,5≥Х≥0,3) with the thickness of alternating layers of 10-15 nm with a total thickness of at least 200 nm. A multilayer buffer composition of the AlxGa1-xN composition is produced, where X decreases from 0.3 to 0 as the structure grows. Finally, the monocrystalline layer of gallium nitride (GaN) of hexagonal orientation is grown.EFFECT: invention enables increasing the structural quality and reducing the mechanical stresses of heteroepitaxial layers of III-N compounds on monocrystalline silicon.1 cl, 1 ex, 3 dwg |
| priorityDate | 2020-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.