http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2737774-C1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e0289b5c7b14585b669edc2580623cb4 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82B3-0009 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82B3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 |
| filingDate | 2019-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26baae423cf832002b3d32214aaa3fd3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b25657adc39d76dbb2853f872e09e2a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f0aa827534da9224cb175cca2fc0203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9205c4bc688c1922b5c2c401f5406e09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fb459e113e990750b6cc05f417823ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73224ea1e45e4ba7cb3cfb18c8815ecc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b350f8a760ee5b8e3f623098e063cc20 |
| publicationDate | 2020-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | RU-2737774-C1 |
| titleOfInvention | Method for chemical deposition of perovskites from gas phase for production of photovoltaic devices, light-emitting diodes and photodetectors |
| abstract | FIELD: optics; technological processes.SUBSTANCE: invention relates to the technology of producing perovskite structures for thin-film optoelectronic devices in technological processes for producing light-emitting diodes, solar cells and photodetectors with a spectral range from 400 to 780 nm, a forbidden zone from 3.1 to 1.57 eV. Method of chemical deposition of solid films with perovskite structure with structural formula ARbX3for production of photovoltaic devices, light-emitting diodes and photodetectors, where A is a cation in form of CH3NH3+, or (NH2)2CH+, or C(NH2)3+, or Cs+, or a mixture thereof, X is an anion in form of Cl-, or Br-, or I-or mixture thereof, from a gas phase, consists in grinding the synthesis components of AX and PbX2in a molar ratio in range of 1:4 to 1:1 in a ball mill in 12-cycle mode for 5 minutes at 400 rpm until formation of a stoichiometric compound, subsequent loading of the grinding products in the heating and evaporation zone of the synthesis components, placing the flat substrate in the heating zone and depositing the synthesis products, providing pressure of 10 Pa in reaction volume and flow of transportation gas in direction from heating zone of reaction components to reaction products deposition zone, increasing temperature in heating zone until evaporation of synthesis components, increasing temperature in reaction products deposition zone, formation of a photoactive perovskite photoluminescent layer by chemical deposition from a gas phase on a substrate in the zone of deposition of synthesis products at a temperature raised to 305 °C and maintained until completion of the process.EFFECT: technical result consists in simplification of production process, namely single-step and low-waste technology without use of solvents, adapted to batch production and suitable for making wide-format films with a perovskite structure on a flat substrate with area of up to 1 m2, which enables to scale the size of devices from 0_1 cm2to 1 m2.1 cl, 4 dwg, 1 ex |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2798007-C2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2802302-C1 |
| priorityDate | 2019-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.