http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2666784-C1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e0289b5c7b14585b669edc2580623cb4 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J1-304 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J1-304 |
| filingDate | 2017-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9daa6ed6134dd92606ed35279a581b67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e623f75fc1a095a368ded795891ebfc4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_760732ed7b44d3048f6efe4d42e79a15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a380b7231add548bdc4ed5f42567a21 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98d7d7c343592ad00894d68c6c79f628 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f4e4d003b46be8ea1fc0fb9db0269fb |
| publicationDate | 2018-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | RU-2666784-C1 |
| titleOfInvention | Matrix auto emission cathode and method for manufacture thereof |
| abstract | FIELD: electrical engineering. n SUBSTANCE: invention relates to devices of solid-state and vacuum electronics, in particular, to auto-emission elements based on the Si-SiC-graphene system used as cathodes: to diodes, to triodes and to devices based on them. Matrix auto-emission element with cathodes based on the Si-SiC-graphene system includes a single-crystal silicon substrate on the front surface of which a cathode unit is formed in the form of multi-point emission structures having the shape of a cone, at the tip of the emission structure, films of underlying silicon carbide and graphene are formed, a contact layer formed on the reverse surface of the semiconductor substrate consisting of an adhesive layer located on the reverse surface of the semiconductor substrate and a current-carrying layer disposed on the surface of the adhesive layer. n EFFECT: increase in the current of the field emission and the time stability of this quantity, a reduction in the operating voltages in vacuum microelectronics devices based on carbonaceous materials and, as a result, the extension of their service life. n 2 cl, 4 dwg |
| priorityDate | 2017-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.