http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2632267-C2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_39b59c31deba545bb89a9fa4c9218795 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0747 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0747 |
| filingDate | 2016-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d867418323c3ade317065f79f58e75e7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e353d87f35f8d098a028909ced453a57 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c354d8b0452399813d8024d7d3e6430d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6dd37df1d1d1208e6a3829d17be2a946 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61af6793ffe6e7bee24521e9951ff8ee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf5ba2bebc658cd50be39b4a8edc5412 |
| publicationDate | 2017-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | RU-2632267-C2 |
| titleOfInvention | Structure of photoconverter based on crystalline silicon and its production line |
| abstract | FIELD: physics. n SUBSTANCE: structure of the photoconverter based on crystalline silicon includes: a textured polycrystalline or monocrystalline silicon plate; a passivation layer in the form of amorphous hydrogenated silicon deposited on each side of the silicon plate; p-layer; n-layer; contact current-collecting layers in the form of transparent conductive oxides; a rear current-collecting layer in the form of a metallic opaque conductive layer, wherein metal oxides of p-type and n-type are respectively used as the p-layer and n-layer, wherein n-type and p-type layers, passivation and current-collecting layers are applied by magnetron sputtering method. Zinc oxide (ZnO) or SnO 2 , Fe 2 O 3 , TiO 2 , V 2 O 7 , MnO 2 , CdO, or other n-type metal oxides are used as n-type metal oxide. MoO, or CoO, Cu 2 O, NiO, Cr 2 O 3 , or other p-type metal oxides are used as p-type metal oxide. A production line for photoconverter based on crystalline silicon, including sequential operations, such as: cleaning and texturing crystalline silicon plates; depositing a passivation layer of amorphous hydrogenated silicon on each side of the silicon plate; application of the p-layer of the photoconverter; application of the n-layer of the photoconverter; application of contact current-collecting layers of the photoconverter; application of the rear current-collecting layer; final assembly, wherein sequential magnetron sputtering of the passivation layer, p-layer in the form of the p-type metal oxide, n-layer in the form of the n-type metal oxide, and current-collecting layers is performed by magnetron sputtering. In this case, a magnetron sputtering of the silicon target in an atmosphere of silane and argon with the addition of hydrogen can be carried out. n EFFECT: invention allows to increase productivity, reduce the dimensions of the production line, eliminate the need for overturning silicon plates in the production process. n 5 cl, 1 dwg |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2675069-C1 |
| priorityDate | 2016-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.