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publicationDate 2017-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber RU-2609764-C1
titleOfInvention Method for producing amorphous films of chalcogenide glass-based semiconductors with phase memory effect
abstract FIELD: chemistry. n SUBSTANCE: used bismuth modified chalcogenide semiconducting material of Ge 2 Sb 2 Te 5. The said material is mechanically activated. Carried out non-equilibrium high-frequency ion-plasma deposition of material in the gas mix of argon and hydrogen at a ratio of 90:10. Material deposited on a dielectric layer in medium vacuum at a pressure between 0.5 to 1.0 Pa and radio-frequency voltage range of 400 to 470 V. n EFFECT: increase of information transfer speed and reduction of power intake. n 1 ex
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