http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2585963-C1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_39fedb23979f07a48e527bbe83ecf56f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y35-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 2015-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79f5316743fcd6b03d88ccbadc4686f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50bc3ca1d0cc84e81822be6d114b37cc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29a1117c46aad5fc68dd2a039eac375e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a000924ac99c00a393d1a677872e76e0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0dc98fb77c97af1dba93ece56fa3f0f9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26c3dc8ca6c3ace40f36cb9f9ad2b78c |
| publicationDate | 2016-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | RU-2585963-C1 |
| titleOfInvention | Method of determining electrophysical parameters of capacitor structure of memristor characterising moulding process |
| abstract | FIELD: measurement technology. n SUBSTANCE: invention relates to nanotechnology, namely to methods of measuring parameters of nano structures, and can be used for determination of electro-physical parameters of capacitive structure memristor characterizing process of molding. Method to determine electro-physical parameters of capacitive structure of memristor characterizing process of molding, includes measurement of volt-ampere and impedance characteristics. Novelty is that selected memristors in form of metal-dielectric-semiconductor capacitors with comparable vessels dielectric and space-charge region of semiconductor, and with no fixation (pinning) Fermi level on this interface; for these structures spectral characteristic of the capacitor is measured photoEMF; from measured characteristics determined electro-physical parameters of structures, which characterise originating in forming change in dielectric, and at boundary of dielectric/semiconductor and semiconductor: capture of charge carriers surface states on boundary dielectric/semiconductor, movement of ions, electrochemical reaction, defects formation. n EFFECT: invention provides the extended diagnostic capabilities of measuring characteristics and high degree of prediction of electro-physical parameters of memristors in form of MIS-condensers to optimise production at their development, besides, invention extends range of methods of measuring technology in up-to-date production of memristors, which are basis of new generation devices of non-volatile memory. n 2 cl, 4 dwg |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021091429-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2706197-C1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2753590-C1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2729978-C1 |
| priorityDate | 2015-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.