| abstract |
FIELD: technological processes. n SUBSTANCE: technical gallium is subjected to vacuum-thermal treatment in a vacuum chamber accommodating graphite crucibles, coaxially located one above other. In centre of bottom of crucibles located above lower melting pot, there is a cylindrical protrusion, on its side surface along perimeter there are holes. Technical gallium is loaded into lower crucible chamber is evacuated to 1·10 -3 -1·10 -5 mmHg, heated to temperature of 1,400-1,500 °C crucible bottom and maintaining said temperature for 2-6 hours. Gallium after vacuum-thermal treatment is subjected to triple crystallisation purification by directed crystallisation at crystal growth rate of 1 cm/h. Technical result is production of gallium metal with gallium content of not less than 99.99999 % by weight. n EFFECT: obtaining gallium of high purity. n 2 cl, 2 dwg, 2 ex |