http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2564116-C1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c32dc81efcb2681766ac574b58ad8a7e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G21H1-06 |
| filingDate | 2014-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37fd7541c8ed7a8c3ba06c389c592a0a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e426112cff7f75bbe58fba23ff543ab3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_249e63eb45c4a5e69b4c3dae4cb53e6f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_505c328662bc8ddabcd8c8ed5d8f81f2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1e72b73526937b23c1ff23da35b98ee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_465fa5a79a6658db6ca3f78707fe1868 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44a076ec797369e0ad7ee75671a212d0 |
| publicationDate | 2015-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | RU-2564116-C1 |
| titleOfInvention | Method of double-stage conversion of energy of ionising radiation into electric energy |
| abstract | FIELD: power engineering. n SUBSTANCE: use of dissociated gas is provided, as well as conversion of ultraviolet radiation into electric energy with the help of a semiconductor diamond. A source of alpha radiation emits alpha particles, which in dissociated gas are converted into ultraviolet radiation. On the way of ultraviolet radiation there is a synthetic semiconductor diamond of p-type with a Schottky contact and ohmic contact so that ultraviolet radiation fully or partially gets onto a semiconductor base element-converter on the basis of the synthetic diamond. At the same time electric current is taken from contacts with the help of conductors and is transmitted to a load. n EFFECT: exclusion of a complex multi-stage scheme of manufacturing of a semiconductor structure with the possibility of using only low-energy beta sources, increased electrophysical characteristics of ionising radiation energy conversion of different types in a wide range of energies into electric energy. n 5 cl, 1 tbl, 1 dwg |
| priorityDate | 2014-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.