http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2552461-C1
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_169f6665a591df987418c35272a00cd9 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
filingDate | 2014-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2015-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf86f75404a91fd1954fada36f5762f5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5226cef2cdadf46dc21dc406923f9f46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92cf1bf3bb13c2e5041e890e03c0c19a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f03ea930449820b2d4bd815118990a9 |
publicationDate | 2015-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | RU-2552461-C1 |
titleOfInvention | Method of forming positive photoresist mask (versions) |
abstract | FIELD: chemistry. n SUBSTANCE: group of inventions relates to methods of producing semiconductor devices on a solid-state body using light-sensitive compositions, e.g., photoresist materials, containing diazo-compounds as light-sensitive substances, and particularly to methods of forming a positive photoresist mask, which can be used in microelectronics to produce articles using techniques which include a photolithography step. A method of forming a positive photoresist mask includes depositing a positive photoresist on a substrate, the photoresist containing novolac resin and an ortho-naphthoquinone diazide compound which is used as a light-sensitive component, drying, exposing and developing. Immediately before depositing the photoresist composition on the substrate, 1,3-dinitrobenzylidene urea, or 1,5-diphenylsemicarbazide, or N,N'-methylene-bisacrylamide is added in amount of 5-15% with respect to the amount of the ortho-naphthoquinone diazide compound. n EFFECT: improved quality of the edge of the photoresist mask and longer service life of the photoresist. n 3 cl, 1 tbl |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2610782-C1 |
priorityDate | 2014-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.