http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2552461-C1

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filingDate 2014-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf86f75404a91fd1954fada36f5762f5
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publicationDate 2015-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber RU-2552461-C1
titleOfInvention Method of forming positive photoresist mask (versions)
abstract FIELD: chemistry. n SUBSTANCE: group of inventions relates to methods of producing semiconductor devices on a solid-state body using light-sensitive compositions, e.g., photoresist materials, containing diazo-compounds as light-sensitive substances, and particularly to methods of forming a positive photoresist mask, which can be used in microelectronics to produce articles using techniques which include a photolithography step. A method of forming a positive photoresist mask includes depositing a positive photoresist on a substrate, the photoresist containing novolac resin and an ortho-naphthoquinone diazide compound which is used as a light-sensitive component, drying, exposing and developing. Immediately before depositing the photoresist composition on the substrate, 1,3-dinitrobenzylidene urea, or 1,5-diphenylsemicarbazide, or N,N'-methylene-bisacrylamide is added in amount of 5-15% with respect to the amount of the ortho-naphthoquinone diazide compound. n EFFECT: improved quality of the edge of the photoresist mask and longer service life of the photoresist. n 3 cl, 1 tbl
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