http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2538415-C1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1cb0556340cf6d1f6c8aae217158bb5c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22 |
| filingDate | 2013-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d38db880221ab572132ad0fb6fcdd582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8586d7170fe0b55c086a229d4f231e84 |
| publicationDate | 2015-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | RU-2538415-C1 |
| titleOfInvention | Method for precision doping of thin films on gallium arsenide surface |
| abstract | FIELD: chemistry. n SUBSTANCE: method for precision doping of thin films on a gallium arsenide surface, which includes treating the surface of a gallium arsenide plate with concentrated hydrofluoric acid for 10 minutes, washing the plate with distilled water, drying on air, oxidising the plate in the presence of an active chemical stimulant - lead (II) oxide - at 530°C, oxygen flow rate of 30 l/h for 40 minutes; according to the invention, oxidation is carried out in the presence of yttrium (III) oxide, the quantitative content of which varies from 0 to 100 mol% of the lead (II) oxide. n EFFECT: forming a thin oxide film on a gallium arsenide surface, said film containing a precision-controlled amount of dopants, using simple equipment with a rapid technique. n 1 dwg |
| priorityDate | 2013-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.