http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2532775-C1

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0119155b757a6c4d3ae84c7aba914924
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-14
filingDate 2013-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a47d8b32fdc4a5a6c8339fa4d56f1e5f
publicationDate 2014-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber RU-2532775-C1
titleOfInvention Solution for laser-induced metallisation of dielectrics
abstract FIELD: chemistry. n SUBSTANCE: invention relates to the technology of applying copper current-conducting structures onto the surface of dielectrics and can be used for the creation of elements and devices in microelectronics. A solution contains copper (II) formiate with the concentration of 0.02÷0.6 mol/l of the water solution, a reducing agent in the form of methyl or isopropyl alcohol with the concentration of 0.05÷2 mol/l of the water solution or in the form of 1,3-butylene glycol, in the concentration of the water solution of 0.05÷0.3 mol/l, as well as a surface-active additive - Twin 20 or Twin 80 in the concentration of the water solution of 0.01÷1 g/l. n EFFECT: claimed solution makes it possible to metallise the dielectric surface at a high rate and to obtain continuous conducting copper paths, corresponding to boards of class 5 accuracy. n 6 cl, 15 dwg, 3 ex
priorityDate 2013-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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