| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80ee3fde76603ac02b0a4cf88b6ffd32 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-10763 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-107 |
| filingDate |
2011-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5bd491bdab870587c8c9375252b16e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fb6a002990d27743b5291852aac8dce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65cf9bb22c6139fb657d23dbea9aa1fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4a2f8d01077f536929cec3f23b36429
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a82e58ef7e99c573b3f2f3bc4da65886 |
| publicationDate |
2014-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
RU-2529224-C1 |
| titleOfInvention |
Method of producing trichlorosilane and silicon for use in production of trichlorosilane |
| abstract |
FIELD: chemistry. n SUBSTANCE: method includes reacting silicon with gaseous HCl at temperature between 250°C and 1100°C and absolute pressure of 0.5-30 atm. The process can be carried out in a fluidised bed reactor, a stirred bed reactor or a solid bed reactor. The silicon fed for reaction contains 40-10000 ppm barium by weight and optionally 40-10000 ppm copper by weight. n EFFECT: high selectivity of the process of producing trichlorosilane. n 14 cl, 4 dwg, 2 tbl, 4 ex |
| priorityDate |
2010-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |